WebIRFP350 Mfr.: STMicroelectronics Customer #: Description: MOSFET Complete Your Design Lifecycle: Obsolete Compare Product Add To Project Add Notes Availability Stock: Not Available Specifications Select at least one checkbox above to show similar products in this category. Show Similar Attributes selected: 0 Environmental Documents WebIRFP350 TO-247 IRFP350 NOTE: When ordering, include the entire part number. Symbol Packaging . IRFP350 16A,400V,0.300Ohm, N-Channel Power Mosfet ... PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS V GS=0V, I D=250µA(Figure 10) 400 - - V Gate to Threshold Voltage V GS(TH) V GS=V
IRFP350 IR Transistors - Jotrin Electronics
WebIRFP350 – N-Channel 400 V 16A (Tc) 190W (Tc) Through Hole TO-247AC from Harris Corporation. Pricing and Availability on millions of electronic components from Digi-Key … WebManufacturer p/n: IRFP350; HTS code: 8541290080; Description: N-Channel Transistor 400V 16A (Tc) 190W (Tc) Through Hole TO-247AC; Data Sheet (current) [1607 KB ] You may also like: 2N7000 Major Brands. 2N7002 ... Test, Tools & Supplies; Wire & Cable; NEW PRODUCTS CLEARANCE - Additional Savings. how much refrigerant does a car need
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WebIRFP350 Product details. FEATURES. Low RDS (on) Improved Inducttive ruggedness. Fast switching times. Rugged polysilicon gate cell structure. Low input capacitance. Extended … Web2. Pulse test: pulse width ≤ 300 µ s, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. V DD … WebPARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BV DSS I D = 250 µ A, V GS = 0V (Figure 10) 500 - - V Gate Threshold Voltage V GS(TH) V GS = V DS, I D = 250 µ A 2.0 - 4.0 V Zero Gate Voltage Drain Current I DSS V DS = Rated BV DSS, V GS = 0V - - 25 µ A V DS = 0.8 x Rated BV DSS, V GS = 0V, T J = 125 o C ... how do plants take in minerals